半导体学报2011，Vol.32Issue(3)：49-53,5.DOI:10.1088/1674-4926/32/3/034002
A millimeter wave large-signal model of GaAs planar Schottky varactor diodes
A millimeter wave large-signal model of GaAs planar Schottky varactor diodes
摘要
Abstract
A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.The model consists of nonlinear resistances and capacitances of the junction region and external parasitic parameters.By analyzing the characteristics of the diode under reverse and forward bias,an extraction procedure of all of the parameters is addressed.To validate the newly proposed model,the PSVDs were fabricated based on a planar process and were measured using an automatic network analyzer.Measurement shows that the model exactly represents the behavior of GaAs PSVDs under a wide bias condition from -10 to 0.6 V and for frequencies up to 40 GHz.关键词
GaAs/ PSVDs/ large-signal model/ parameter extractionKey words
GaAs/ PSVDs/ large-signal model/ parameter extraction引用本文复制引用
Dong Junrong,Huang Jie,Tian Chao,Yang Hao,Zhang Haiying..A millimeter wave large-signal model of GaAs planar Schottky varactor diodes[J].半导体学报,2011,32(3):49-53,5.基金项目
Project supported by the National Natural Science Foundation of China (No.60806024). （No.60806024）
