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Peltier effect in doped silicon microchannel plates

Ci Pengliang Shi Jing Wang Fei Xu Shaohui Yang Zhenya Yang Pingxiong Wang Lianwei Gao Chen Paul K.Chu

半导体学报2011,Vol.32Issue(12):40-43,4.
半导体学报2011,Vol.32Issue(12):40-43,4.DOI:10.1088/1674-4926/32/12/122003

Peltier effect in doped silicon microchannel plates

Peltier effect in doped silicon microchannel plates

Ci Pengliang 1Shi Jing 1Wang Fei 1Xu Shaohui 1Yang Zhenya 1Yang Pingxiong 1Wang Lianwei 1Gao Chen 2Paul K.Chu3

作者信息

  • 1. Laboratory of Polar Materials and Devices, Ministry of Education, and Department of Electronic Engineering,East China Normal University, Shanghai 200241, China
  • 2. Department of Microelectronics, Fudan University, Shanghai 200433, China
  • 3. Department of Physics and Material Sciences, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
  • 折叠

摘要

Abstract

The Seebeck coefficient is determined from silicon microchannel plates(Si MCPs)prepared by photoassisted electrochemical etching at room temperature(25 ℃).The coefficient of the sample with a pore size of 5 × 5μm2,spacing of 1 μm and thickness of about 150μm is-852 μV/K along the edge of the square pore.After doping with boron and phosphorus,the Seebeck coefficient diminishes to 256 μV/K and-117 μV/K along the edge of the square pore,whereas the electrical resistivity values are 7.5 × 10-3 Ω·cm and 1.9 × 10-3 Ω·cm,respectively.Our data imply that the Seebeck coefficient of the Si MCPs is related to the electrical resistivity and is consistent with that of bulk silicon.Based on the boron and phosphorus doped samples,a simple device is fabricated to connect the two type Si MCPs to evaluate the Peltier effect.When a proper current passes through the device,the Peltier effect is evidently observed.Based on the experimental data and the theoretical calculation,the estimated intrinsic figure of merit ZT of the unicouple device and thermal conductivity of the Si MCPs are 0.007 and 50 W/(m·K),respectively.

关键词

silicon microchannel plates/ doping/ thermoelectric/ Peltier effect

Key words

silicon microchannel plates/ doping/ thermoelectric/ Peltier effect

引用本文复制引用

Ci Pengliang,Shi Jing,Wang Fei,Xu Shaohui,Yang Zhenya,Yang Pingxiong,Wang Lianwei,Gao Chen,Paul K.Chu..Peltier effect in doped silicon microchannel plates[J].半导体学报,2011,32(12):40-43,4.

基金项目

Project supported by the Shanghai Fundamental Key Project(No.10JC1404600),the Shanghai Natural Science Foundation(No.11ZR1411000),the Innovation Program of Shanghai Municipal Education Commission(No.09ZZ46),the International Collaboration Project(No.10520704400),the National Natural Science Foundation of China(Nos.60990312,61076060,61176108),and the City University of Hong Kong Strategic Research Grant(SRG)(No.7008009). (No.10JC1404600)

半导体学报

OACSCDCSTPCDEI

1674-4926

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