半导体学报2011，Vol.32Issue(12)：48-52,5.DOI:10.1088/1674-4926/32/12/123002
Selected area laser-crystallized polycrystalline silicon thin films by a pulsed Nd:YAG laser with 355 nm wavelength
Selected area laser-crystallized polycrystalline silicon thin films by a pulsed Nd:YAG laser with 355 nm wavelength
摘要
Abstract
Selected area laser-crystallized polycrystalline silicon(p-Si)thin films were prepared by the third harmonics(355 nm wavelength)generated by a solid-state pulsed Nd:YAG laser.Surface morphologies of 400 nm thick films after laser irradiation were analyzed.Raman spectra show that film crystallinity is improved with increase of laser energy.The optimum laser energy density is sensitive to the film thickness.The laser energy density for efficiently crystallizing amorphous silicon films is between 440-634 mJ/cm2 for 300 nm thick films and between 777-993 mJ/cm2 for 400 nm thick films.The optimized laser energy density is 634,975 and 1571 mJ/cm2 for 300,400 and 500 nm thick films,respectively.关键词
polycrystalline silicon thin films/ Nd:YAG laser/ laser crystallizationKey words
polycrystalline silicon thin films/ Nd:YAG laser/ laser crystallization引用本文复制引用
Duan Chunyan,Liu Chao,Ai Bin,Lai Jianjun,Deng Youjun,Shen Hui..Selected area laser-crystallized polycrystalline silicon thin films by a pulsed Nd:YAG laser with 355 nm wavelength[J].半导体学报,2011,32(12):48-52,5.基金项目
Project supported by the National Natural Science Foundation of China(Nos.50802118,60906005)and the Natural Science Foundation of Guangdong Province,China(No.9451027501002848). （Nos.50802118,60906005）
