半导体学报2011，Vol.32Issue(11)：172-176,5.DOI:10.1088/1674-4926/32/11/116001
Effect of copper slurry on polishing characteristics
Effect of copper slurry on polishing characteristics
摘要
Abstract
The composition of the polishing solution is optimized by investigating the impact of the WIWNU (the so-called within-wafer-non-uniformity WIWNU) and the removal rate (RR) on the polishing characteristics of copper.The oxidizer concentration is 1 Vol%; the abrasive concentration is 0.8 Vol%; the chelating agent of the solution is 2 Vol%.The working pressure is 1 kPa.The defect on the surface is degraded and the surface is clean after polishing.The removal rate is 289 nm/min and the WIWNU is 0.065.The surface roughness measured by AFM after CMP (chemical mechanical planarization) is 0.22 nm.关键词
copper slurry/ chemical mechanical planarization/ WIWNUKey words
copper slurry/ chemical mechanical planarization/ WIWNU引用本文复制引用
Hu Yi,Liu Yuling,Liu Xiaoyan,Wang Liran,He Yangang..Effect of copper slurry on polishing characteristics[J].半导体学报,2011,32(11):172-176,5.基金项目
Project supported by the Special Project Items No.2 in the National Long-Term Technology Development Plan,China (No.2009ZX02308). （No.2009ZX02308）
