半导体学报2011，Vol.32Issue(12)：12-27,16.DOI:10.1088/1674-4926/32/12/121002
MOS Capacitance-Voltage Characteristics Ⅲ.Trapping Capacitance from 2-Charge-State Impurities
MOS Capacitance-Voltage Characteristics Ⅲ.Trapping Capacitance from 2-Charge-State Impurities
摘要
Abstract
Low-frequency and high-frequency capacitance-voltage curves of Metal-Oxide-Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier,or one-energy-level impurity species.Models described include a donor electron trap and an acceptor hole trap,both donors,both acceptors,both shallow energy levels,both deep,one shallow and one deep,and the identical donor and acceptor.Device and material parameters are selected to simulate chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications.关键词
MOS/ silicon/ trapping capacitance/ dopant impurities/ donors/ acceptorsKey words
MOS/ silicon/ trapping capacitance/ dopant impurities/ donors/ acceptors引用本文复制引用
Jie Binbin,Sah Chihtang..MOS Capacitance-Voltage Characteristics Ⅲ.Trapping Capacitance from 2-Charge-State Impurities[J].半导体学报,2011,32(12):12-27,16.基金项目
This investigation is supported by Xiamen University,China,and also the CTSAH Associates(CTSA),founded by the late Linda Su-Nan Chang Sah. （CTSA）
