半导体学报2012，Vol.33Issue(1)：20-24,5.DOI:10.1088/1674-4926/33/1/012001
Effect of rhenium doping on various physical properties of single crystals of MoSe2
Effect of rhenium doping on various physical properties of single crystals of MoSe2
MihirM. Vora 1Aditya M. Vora1
作者信息
- 1. Parmeshwari 165, Vijaynagar Area, Hospital Road, Bhuj-Kutch, 370001, Gujarat, India
- 折叠
摘要
Abstract
Effect of rhenium doping is examined in single crystals of MoSe2 viz.MoRe0.005Se1.995,MoRe0.001Se1.999 and Mo0.995Re0.005Se2,which is grown by using the direct vapor transport (DVT) technique.The grown crystals are structurally characterized by X-ray diffraction,by determining their lattice parameters a and c,and X-ray density.Also,the Hall effect and thermoelectric power (TEP) measurements show that the single crystals exhibit a p-type semiconducting nature.The direct and indirect band gap measurements are also undertaken on these semiconducting materials.关键词
structural properties/electrical properties/optical properties/single crystalsKey words
structural properties/electrical properties/optical properties/single crystals引用本文复制引用
MihirM. Vora,Aditya M. Vora..Effect of rhenium doping on various physical properties of single crystals of MoSe2[J].半导体学报,2012,33(1):20-24,5.
