半导体学报2012，Vol.33Issue(1)：32-36,5.DOI:10.1088/1674-4926/33/1/013002
Effect of substrate temperature on the properties of deep ultraviolet transparentconductive ITO/Ga2O3 films
Effect of substrate temperature on the properties of deep ultraviolet transparentconductive ITO/Ga2O3 films
摘要
Abstract
ITO/Ga2O3 bi-layer films were deposited on quartz glass substrates by magnetron sputtering.The effect of substrate temperature on the structure,surtace morphology,optical and electrical properties of ITO/Ga2O3 films was investigated by an X-ray diffractometer,a scanning electron microscope,a double beam spectrophotometer and the Hall system,respectively.The structural characteristics showed a dependence on substrate temperature.The resistivity of the films varied from 6.71 × 10-3 to 1.91 × 10-3 Ω·cm as the substrate temperature increased from 100 to 350 ℃.ITO (22 nm)/Ga2O3 (50 nm) films deposited at 300 ℃ exhibited a low sheet resistance of 373.3 Ω/□ and high deep ultraviolet transmittance of 78.97% at the wavelength of 300 nm.关键词
transparent conductive film/bi-layer films/deep ultraviolet/magnetron sputtering/gallium oxide/indium tin oxideKey words
transparent conductive film/bi-layer films/deep ultraviolet/magnetron sputtering/gallium oxide/indium tin oxide引用本文复制引用
Li Ting,Yan Jinliang,Ding Xingwei,Zhang Liying..Effect of substrate temperature on the properties of deep ultraviolet transparentconductive ITO/Ga2O3 films[J].半导体学报,2012,33(1):32-36,5.基金项目
Project supported by the National Natural Science Foundation of China (No.10974077),the Natural Science Foundation of Shandong Province,China (No.2009ZRB01702),and the Shandong Province Higher Educational Science and Technology Program (No.J10LA08). （No.10974077）
