半导体学报2012，Vol.33Issue(1)：47-51,5.DOI:10.1088/1674-4926/33/1/014002
Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage
Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage
摘要
Abstract
We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer,which leads to a higher potential barrier at the backside of the twodimensional electron gas channel and better carrier confinement.This,remarkably,reduces the drain leakage current and improves the device breakdown voltage.The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (～ 100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (～50 V) for the device with gate dimensions of 0.5 × 100 μm and a gate-drain distance of 1μm.The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm,a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz.关键词
AlGaN/GaN/AlGaN double heterojunctions/breakdown voltage/carrier confinementKey words
AlGaN/GaN/AlGaN double heterojunctions/breakdown voltage/carrier confinement引用本文复制引用
Ma Juncai,Zhang Jincheng,Xue Junshuai,Lin Zhiyu,Liu Ziyang,Xue Xiaoyong,Ma Xiaohua,Hao Yue..Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage[J].半导体学报,2012,33(1):47-51,5.基金项目
Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (No.2008ZX01002-002) and the Major Program and the Key Program of the National Natural Science Foundation of China (Nos.60890191,60736033). （No.2008ZX01002-002）
