半导体学报2012，Vol.33Issue(1)：137-143,7.DOI:10.1088/1674-4926/33/1/015010
An IO block array in a radiation-hardened SOI SRAM-based FPGA
An IO block array in a radiation-hardened SOI SRAM-based FPGA
Zhao Yan 1Gao Jiantou 1Wang Jian 1Li Ming 1Liu Guizhai 1Zhang Feng 1Guo Xufeng 1Zhao Kai 1Stanley L.Chen 1Yu Fang 1Liu Zhongli 1Wu Lihua 1Han Xiaowei 1Li Yan 1Zhang Qianli 1Chen Liang 1Zhang Guoquan 1Li Jianzhong 1Yang Bo1
作者信息
- 1. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- 折叠
摘要
Abstract
We present an input/output block (IOB) array used in the radiation-hardened SRAM-based fieldprogrammable gate array (FPGA) VS1000,which is designed and fabricated with a 0.5 μm partially depleted silicon-on-insulator (SOI) logic process at the CETC 58th Institute.Corresponding with the characteristics of the FPGA,each IOB includes a local routing pool and two IO cells composed of a signal path circuit,configurable input/output buffers and an ESD protection network.A boundary-scan path circuit can be used between the programmable buffers and the input/output circuit or as a transparent circuit when the IOB is applied in different modes.Programmable IO buffers can be used at TTL/CMOS standard levels.The local routing pool enhances the flexibility and routability of the connection between the IOB array and the core logic.Radiation-hardened designs,including A-type and H-type body-tied transistors and special D-type registers,improve the anti-radiation performance.The ESD protection network,which provides a high-impulse discharge path on a pad,prevents the breakdown of the core logic caused by the immense current.These design strategies facilitate the design of FPGAs with different capacities or architectures to form a series of FPGAs.The functionality and performance of the IOB array is proved after a functional test.The radiation test indicates that the proposed VS1000 chip with an IOB array has a total dose tolerance of 100 krad(Si),a dose survivability rate of 1.5 × 1011 rad(Si)/s,and a neutron fluence immunity of 1 × 1014 n/cm2.关键词
partially-depleted SOI/FPGA/IOB/radiation-hardened/ESD protectionKey words
partially-depleted SOI/FPGA/IOB/radiation-hardened/ESD protection引用本文复制引用
Zhao Yan,Gao Jiantou,Wang Jian,Li Ming,Liu Guizhai,Zhang Feng,Guo Xufeng,Zhao Kai,Stanley L.Chen,Yu Fang,Liu Zhongli,Wu Lihua,Han Xiaowei,Li Yan,Zhang Qianli,Chen Liang,Zhang Guoquan,Li Jianzhong,Yang Bo..An IO block array in a radiation-hardened SOI SRAM-based FPGA[J].半导体学报,2012,33(1):137-143,7.
