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Synthesis and efficient field emission characteristics of patterned ZnO nanowires

张永爱 吴朝兴 郑泳 郭太良

半导体学报2012,Vol.33Issue(2):18-22,5.
半导体学报2012,Vol.33Issue(2):18-22,5.DOI:10.1088/1674-4926/33/2/023001

Synthesis and efficient field emission characteristics of patterned ZnO nanowires

Synthesis and efficient field emission characteristics of patterned ZnO nanowires

张永爱 1吴朝兴 1郑泳 1郭太良1

作者信息

  • 折叠

摘要

Abstract

Patterned ZnO nanowires were successfully synthesized on ITO electrodes deposited on the glass substrate by using a simple thermal evaporation approach.The morphology,crystallinity and optical properties of ZnO nanowires were characterized by scanning electron microscopy,X-ray diffraction,energy dispersive X-ray and photoluminescence spectroscopy.Their field emission characteristics were also investigated.SEM images showed that the ZnO nanowires,with a diameter of 100-200 nm and length up to 5μm,were highly uniform and well distributed on the linear ITO electrodes.The field emission measurement indicated that patterned ZnO nanowire arrays have a turn-on field of 1.6 V/μm at current density of 1 μA/cm2 and a threshold field of 4.92 V/μm at current density of 1 mA/cm2 at an emitter-anode gap of 700 μm.The current density rapidly reached 2.26 mA/cm2 at an applied field of 5.38 V/μm.The fluctuation of emission current was lower than 5% for 4.5 h.The low turn-on field,high current density and good stability of patterned ZnO nanowire arrays indicate that it is a promising candidate for field emission application.

关键词

zinc oxide/ nanowires/ patterned growth/ field emission

Key words

zinc oxide/ nanowires/ patterned growth/ field emission

引用本文复制引用

张永爱,吴朝兴,郑泳,郭太良..Synthesis and efficient field emission characteristics of patterned ZnO nanowires[J].半导体学报,2012,33(2):18-22,5.

基金项目

Project supported by the National High Technology Research and Development Program for Advanced Materials of China (No.2008AA03A313) and the Technology Projects of Department of Education,Fujian Province,China (Nos.JA09017,JA11014). (No.2008AA03A313)

半导体学报

OACSCDCSTPCDEI

1674-4926

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