半导体学报2012，Vol.33Issue(2)：23-27,5.DOI:10.1088/1674-4926/33/2/023002
Analysis of the p+/p window layer of thin film solar cells by simulation
Analysis of the p+/p window layer of thin film solar cells by simulation
摘要
Abstract
The application of a p+/p configuration in the window layer of hydrogenated amorphous silicon thin film solar cells is simulated and analyzed utilizing an AMPS-1D program.The differences between p+-p-i-n configuration solar cells and p-i-n configuration solar cells are pointed out.The effects of dopant concentration,thickness of p+-layer,contact barrier height and defect density on solar cells are analyzed.Our results indicate that solar cells with a p+-p-i-n configuration have a better performance.The open circuit voltage and short circuit current were improved by increasing the dopant concentration of the p+ layer and lowering the front contact barrier height.The defect density at the p/i interface which exceeds two orders of magnitude in the intrinsic layer will deteriorate the cell property.关键词
p+/p configuration/ thin film solar cells/ hydrogenated amorphous silicon solar cells/ window layerKey words
p+/p configuration/ thin film solar cells/ hydrogenated amorphous silicon solar cells/ window layer引用本文复制引用
林爱国, 丁建宁,袁宁一,王书博,程广贵,卢超..Analysis of the p+/p window layer of thin film solar cells by simulation[J].半导体学报,2012,33(2):23-27,5.基金项目
Project supported by the Key Programs for Science and Technology Development of Jiangsu,China (Nos.BE20080030,BE2009028),theQing Lan Project,China (No.2008-04),and the Jiangsu "333" Project,China (No.201041). （Nos.BE20080030,BE2009028）
