半导体学报2012，Vol.33Issue(2)：28-35,8.DOI:10.1088/1674-4926/33/2/024001
Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI MOSFETs
Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI MOSFETs
Rajiv Sharma 1Sujata Pandey 2Shail Bala Jain1
作者信息
- 1. Department of Electronics and Communication Engineering, Guru Gobind Singh Indraprastha University, Delhi, India
- 2. Department of Electronics and Communication Engineering, Amity University, Sector-125 Noida, India
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摘要
Abstract
A new 2D analytical drain current model is presented for symmetric double-gate fully depleted nanoscale SOI MOSFETs.Investigation of device parameters like transconductance for double-gate fully depleted nanoscale SOI MOSFETs is also carried out.Finally this work is concluded by modeling the cut-off frequency,which is one of the main figures of merit for analog/RF performance for double-gate fully depleted nanoscale SOI MOSFETs.The results of the modeling are compared with those obtained by a 2D ATLAS device simulator to verify the accuracy of the proposed model.关键词
double-gate/ fully depleted/ silicon-on-insulator/ Poisson's equation/ radio frequency/ ATLASKey words
double-gate/ fully depleted/ silicon-on-insulator/ Poisson's equation/ radio frequency/ ATLAS引用本文复制引用
Rajiv Sharma,Sujata Pandey,Shail Bala Jain..Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI MOSFETs[J].半导体学报,2012,33(2):28-35,8.
