| 注册
首页|期刊导航|半导体学报|A sub-1 V high-precision CMOS bandgap voltage reference

A sub-1 V high-precision CMOS bandgap voltage reference

廖峻 赵毅强 耿俊峰

半导体学报2012,Vol.33Issue(2):138-142,5.
半导体学报2012,Vol.33Issue(2):138-142,5.DOI:10.1088/1674-4926/33/2/025014

A sub-1 V high-precision CMOS bandgap voltage reference

A sub-1 V high-precision CMOS bandgap voltage reference

廖峻 1赵毅强 1耿俊峰1

作者信息

  • 折叠

摘要

Abstract

A third-order,sub-1 V bandgap voltage reference design for low-power supply,high-precision applications is presented.This design uses a current-mode compensation technique and temperature-dependent resistor ratio to obtain high-order curvature compensation.The circuit was designed and fabricated by SMIC 0.18μm CMOS technology.It produces an output reference of 713.6 mV.The temperature coefficient is 3.235 pprn/℃ in the temperature range of-40 to 120 ℃,with a line regulation of 0.199 mV/V when the supply voltage varies from 0.95 to 3 V.The average current consumption of the whole circuit is 49 μA at the supply voltage of 1 V.

关键词

bandgap reference/ curvature compensation/ low power supply/ low temperature coefficient

Key words

bandgap reference/ curvature compensation/ low power supply/ low temperature coefficient

引用本文复制引用

廖峻,赵毅强,耿俊峰..A sub-1 V high-precision CMOS bandgap voltage reference[J].半导体学报,2012,33(2):138-142,5.

半导体学报

OACSCDCSTPCDEI

1674-4926

访问量0
|
下载量0
段落导航相关论文