材料科学与工程学报2011，Vol.29Issue(4)：517-520,585,5.
退火温度对Bi2Te2.7Se0.3薄膜的微结构及热电性能的影响
Effects of Annealing on Microstructure and Thermoelectric Properties of Bi_2Te_（2.7）Se_（0.3） Thin Films
摘要
Abstract
N-type Bi2Te2.7Se0.3 thermoelectric thin films with thickness 800 nm were deposited on glass substrates by flash evaporation method at 473 K.Effects of annealing on the thermoelectric properties of Bi2Te2.7Se0.3 thin films were examined for the samples annealed at 373 K–573 K for one hour.The structures,morphology and chemical composition of the thin films were characterized by X-ray diffractometry,field emission scanning electron microscopy and energy dispersive X-ray spectroscopy,respectively.Thermoelectric properties of the thin films have been evaluated by measuring electrical resistivity and Seebeck coefficient at 300 K.The Hall coefficients were measured at room temperature by the Van der Pauw method.The carrier concentration and mobility were calculated from the Hall coefficient.When annealed at 473 K,the electrical resistivity and Seebeck coefficient are 2.7 mΩ·cm and -180 μV/K,respectively.The maximum thermoelectric power factor is enhanced to 12 μW/cmK2.关键词
退火温度/热电薄膜/热电性能/瞬间蒸发法Key words
annealing temperature/thermoelectric thin films/thermoelectric properties/flash evaporation分类
通用工业技术引用本文复制引用
段兴凯,江跃珍,宗崇文,侯文龙..退火温度对Bi2Te2.7Se0.3薄膜的微结构及热电性能的影响[J].材料科学与工程学报,2011,29(4):517-520,585,5.基金项目
江西省教育厅科技资助项目 （）
2010九江学院大学生自主创新性实验资助项目 （）
