材料科学与工程学报2011，Vol.29Issue(5)：655-658,678,5.
LPCVD法在GaN上生长Ge薄膜及其特性
Growth and Characterization of Ge on GaN by LPCVD
摘要
Abstract
The epitaxial growth of Ge on GaN/sapphire substrate is reported.Different growth conditions are tested.The authors found that growth of Ge directly on GaN/sapphire substrates produces good Ge films by low pressure chemical vapor deposition（LPCVD）.High resolution X-ray diffractometry shows that three Ge peaks located at 2θ=27.3°、2θ=45.3° and 2θ=52.9°,rseparately.Morphologies of the layer were imaged with atomic force microscopy,which show that the roughness of the Ge film is 43.4nm.The photograph of the cross section of the sample by scanning electron microscopy shows clearly Ge/GaN/Al2O3 three layers.The Ge grains of the surface are dense and uniform.From the Raman spectra we obtain the strong Ge TO phonon mode peaks around 299.6cm-1.This means that we get good quality of Ge films.关键词
Ge/GaN/衬底/低压化学气相沉积Key words
Ge/GaN/substrate/LPCVD分类
数理科学引用本文复制引用
谢自力,韩平,张荣,曹亮,刘斌,修向前,华雪梅,赵红,郑有蚪..LPCVD法在GaN上生长Ge薄膜及其特性[J].材料科学与工程学报,2011,29(5):655-658,678,5.基金项目
supported by special funds for major state basic research project （）
hi-tech research project （）
national nature science foundation of China （）
The nature science foundation of Jiangsu province （）
the researchfunds from NJU-Yangzhou Institute of Opto-electronics （）
