电工技术学报2011，Vol.26Issue(12)：79-84,6.
基于集总参数法的IGBT模块温度预测模型
Temperature Prediction Model of IGBT Modules Based on Lumped Parameters Method
摘要
Abstract
Temperature of insulated gate bipolar transistor （IGBT） modules is a main influence factor of reliability, which is very difficult to measure. In order to solve this problem, interior heat conduction mechanism is analyzed. Then thermal network model of IGBT modules is constructed by employing lumped parameters method of instantaneous unsteady heat conduction. Parameters extraction methods of equivalent thermal resistance, equivalent thermal capacitance and heat losses are preferred. The paper gives experimental and simulated temperature curves, which datum from thermal network model, technical documents, base-plate measurement and finite element model. Result show that thermal network model is validated.关键词
热网络模型/集总参数法/结温Key words
Insulated gate bipolar transistor （IGBT）/thermal network model/lumped parameters method/junction temperature分类
信息技术与安全科学引用本文复制引用
魏克新,杜明星..基于集总参数法的IGBT模块温度预测模型[J].电工技术学报,2011,26(12):79-84,6.基金项目
国家自然科学基金（50977063）,国家863计划（2008AA11A145）和天津市科技支撑计划重点（09ZCKFGX01800）资助项目. （）
