大功率变流技术Issue(6)：10-14,5.
大功率IGBT模块并联均流特性研究
Research on Even Flow of High-power IGBT Module in Parallel
祁善军 1翁星方 1宋文娟 2黄南1
作者信息
- 1. 株洲南车时代电气股份有限公司,湖南株洲412001
- 2. 三一集团,湖南长沙410100
- 折叠
摘要
Abstract
The higher load current can be withstood when the high-power IGBT running in parallel. But the even flow problems of static and dynamic state require consideration when designing high-power IGBT in parallel. By PSpice simulation, the main factors affecting the static even flow are found, which include saturation voltage drop, collector and emitter＇s lead equivalent resistance of IGBT module. The main factors affecting the dynamic even flow involve drive circuit, IGBT device parameters and main circuit layout. The solution of IGBT even flow in parallel is proposed. The key points of IGBT parallel circuit design are analyzed. By simulation, the feasibility of the proposed method is verified.关键词
IGBT并联/静态均流/动态均流/PSpice仿真Key words
parallel IGBT/static even flow/dynamic even flow/PSpice simulation分类
电子信息工程引用本文复制引用
祁善军,翁星方,宋文娟,黄南..大功率IGBT模块并联均流特性研究[J].大功率变流技术,2011,(6):10-14,5.
