电源技术2011，Vol.35Issue(12)：1583-1585,3.
Ag掺杂对Bi2(Te0.95Se0.05)3薄膜热电功率因子的影响
Thermoelectric power factor of Ag-doped Bi2(Te0.95Se0.05)3 thin films
摘要
Abstract
Ag-doped Bi2 (Te0.95Se0.05)3 thermoelectric thin films with thickness of 800 nm were deposited on glass substrates by flash evaporation method at 473 K. The structures of the thin films were analyzed by X-ray diffraction. The film thickness of the annealed samples was measured by ellipsometer. Ag doping concentration on thermoelectric power factor of the annealed thin films were investigated by room-temperature measurement of the Seebeck coefficient and electrical resistivity. The thermoelectric power factor was enhanced to 16.1 μW/(cm·K2) at 0.2% Ag doping. The Seebeck coefficients were positive with increasing Ag doping concentration from 0.25% to 0.5%. The thin films show p-type conduction. The thermoelectric power factors show a decreasing tendency.关键词
热电薄膜/掺杂/热电功率因子Key words
thermoelectric thin films/ doping/ thermoelectric power factor分类
通用工业技术引用本文复制引用
段兴凯,江跃珍..Ag掺杂对Bi2(Te0.95Se0.05)3薄膜热电功率因子的影响[J].电源技术,2011,35(12):1583-1585,3.基金项目
江西省教育厅科技资助项目(GJJ11625) （GJJ11625）
