电子器件2011，Vol.34Issue(6)：621-624,4.DOI:10.3969/j.issn.1005-9490.2011.06.005
射频磁控溅射法制备AZO/p-Si异质结及其性能研究
Heterojunction and Properties of AZO/p-Si Prepared by RF Magnetron Sputtering
摘要
Abstract
AZO/p-Si heterojunction was fabricated by the use of RF magnetron to sputter Al-doped ZnO( AZO)film onto p-type Si wafer substrate. The properties of AZO films were studied by X-ray diffraction ( XRD) ,UV-vis spec-trophotometer, four-point probe and Hall effect measurement. The results indicated that AZO films have good crystallization quality, electrical and optical properties. The I-V measurement showed that AZO/p-Si heterojunction possesses fairly good rectifying behavior under dark condition and the reverse saturation current is 1. 29×l0-6A. The ratio of forward and reverse current at ±2V is 229.41 and the ideality factor of the heterojunction is calculated to be 2.28. AZO/p-Si heterojunction shows obvious photovoltaic effect under standard illumination condition, and the conversion efficiency of the heterojunction solar cell is 2.51%.关键词
射频磁控溅射/AZO/p-Si异质结/I-V特性/太阳电池Key words
RF magnetron sputtering/AZO/p-Si heterojunction/I-V characteristics/solar cell分类
数理科学引用本文复制引用
刘斌,沈鸿烈,岳之浩,江丰,冯晓梅,潘园园..射频磁控溅射法制备AZO/p-Si异质结及其性能研究[J].电子器件,2011,34(6):621-624,4.基金项目
国家863计划项目(2006AA032219) （2006AA032219）
江苏高校优势学科建设工程资助项目 （）
