电子器件2011，Vol.34Issue(6)：677-680,4.DOI:10.3969/j.issn.1005-9490.2011.06.018
一款结构新颖的2GHz～8.5GHz宽带放大器
A Novel 2 GHz ～ 8.5 GHz Broadband Amplifier
摘要
Abstract
A novel circuit structure of amplifier with the performance of wide bandwidth was designed, which consists of four cascaded emitter-followers. The bandwidth is expanded by adjusting each stage of transistor transcon-ductance by adaptively active bias circuit, and controling the resonant frequency, which is realized by adjusting inter-stage inductors and the junction capacitance Cbe of the next emitter-followers. The principle and stability of this structure were analyzed in detail. A broadband amplifier of this novel structure was designed based on 2 μm InGaP/ GaAs HBT technology. Simulation results show that the new circuit structure can effectively improve gain-bandwidth product. In 2 GHz ～ 8.5 GHz frequency range, the gain of this broadband amplifier could be up to 20 dB with a gain flatness less than ±0.5 dB,and the output power at 1 dB gain compression is more than 17 dBm.关键词
放大器/宽带/射极跟随器/稳定性Key words
amplifier/ broadband/ emitter-follower/ stability分类
信息技术与安全科学引用本文复制引用
李昕,杨涛,陈良月,俞汉扬,高怀..一款结构新颖的2GHz～8.5GHz宽带放大器[J].电子器件,2011,34(6):677-680,4.基金项目
2010年江苏省科技型企业技术创新资金项目(5BC201010291) （5BC201010291）
