电子器件2012，Vol.35Issue(1)：1-6,6.DOI:10.3969/j.issn.1005-9490.2012.01.001
(Si/Ge)n多层薄膜的设计制备及光吸收性能
Design Preparation and Optical Absorbance of ( Si/Ge)n Multi-Layer Film
摘要
Abstract
( Si/Ge)n thin films with different layers and thickness have been successfully deposited by radio frequency magnetron sputtering method. X-ray diffraction and Raman spectra results showed that( Si/Ge)n films in sputtering state were microcrystalline structure, and the diffusion layers ( Si - Ge ) were formed in sputtering process. The mutual diffusion and crystallization depended on sputtering time. The FESEM indicated that the films were composed of particle-like cluster, and the interface between the layers was distinct. The UV-vis spectra suggested that the films had wide absorption range in visible range, and the range was enlarged with the increasing of the layer. The increase of Si single-layer film thickness seemed to have little influence on the scope of solar spectrum response.关键词
(Si/Ge)n多层薄膜/射频磁控溅射/层数/厚度/UV-vis光谱Key words
(Si/Ge)n multilayer films/RF magnetron sputtering/layer/thickness/UV-vis spectra分类
数理科学引用本文复制引用
何明霞,刘劲松,李子全,曹安,刘建宁,丛孟启,蒋维娜,彭洁,余乐..(Si/Ge)n多层薄膜的设计制备及光吸收性能[J].电子器件,2012,35(1):1-6,6.基金项目
江苏省自然科学基金项目(BK2009379) （BK2009379）
国家大学生创新性实验计划(20101028727) （20101028727）
南京航空航天大学基本科研业务费专项科研项目(1006-56Y1064) （1006-56Y1064）
南京航空航天大学引进人才基金(1006-909308) （1006-909308）
