发光学报2011，Vol.32Issue(12)：1281-1285,5.DOI:10.3788/fgxb20113212.1281
薄膜热处理对ZnO薄膜晶体管性能的提高
Improvment of ZnO-TFT Performance by Annealing ZnO Film
摘要
Abstract
The bottom gate thin-film transistors (TFTs) with un-annealed and annealed ZnO film as a channel layer were fabricated. Compared with the un-annealed device, the performance of the device with annealed ZnO had been improved. The saturation mobility increased from 2. 3 to 3. 12 cmV( V·S) , the threshold voltage reduced from 20. 8 to 9. 9 V, the threshold swing varied from 2.6 to 1.9 V/dec, and the threshold voltage shifted from 8.0 to 3.4 V after applying a gate bias stress of 25 V for 3 600 s. The experimental results indicate that using annealed ZnO film as channel layer is an effective approach for improving ZnO-based TFT performance and bias stress stability.关键词
薄膜晶体管/ZnO/稳定性/退火Key words
thin-film transistor/ ZnO/ stability/ annealing分类
信息技术与安全科学引用本文复制引用
张浩,张良,李俊,蒋雪茵,张志林,张建华..薄膜热处理对ZnO薄膜晶体管性能的提高[J].发光学报,2011,32(12):1281-1285,5.基金项目
国家863计划(2010AA03A337) （2010AA03A337）
上海市科委(09DZ2292901)资助项目 （09DZ2292901）
