高等学校化学学报2011，Vol.32Issue(12)：2739-2742,4.
宽带隙Cu(In,Al)Se2薄膜的制备及表征
Preparation and Characterization of Wide-bandgap Cu ( In, Al) Se2 Thin Films
摘要
Abstract
The precursor thin films of CuInSe2 ( CIS) were prepared using a special pulse electrodeposition method and Al was deposited on the CIS thin films through the vacuum evaporation method. The Cu(In, Al)Se2(CIAS) thin films were successfully fabricated by annealing the composite thin films of CIS and Al. The morphology, structure, composition and optical absorbance property of the CIAS thin films were characterized by SEM, EDS, XRD, XPS and UV-Vis, respectively. The CIAS thin films composed of uniform particles present a chalcopyrite structure, and the surface is smooth and compact. The CIAS thin film has good absorption in the visible region, and the band gap is about 1. 65 eV.关键词
特殊脉冲电沉积/真空蒸镀/CuInSe2薄膜/Cu (InAl) Se2薄膜Key words
Special pulse electrodeposition/ Vacuum evaporation/ CuInSe2 thin film/ Cu (In, Al) Se2 thin film分类
化学化工引用本文复制引用
黄灿领,胡彬彬,王广君,李洪伟,龚时江,杜祖亮..宽带隙Cu(In,Al)Se2薄膜的制备及表征[J].高等学校化学学报,2011,32(12):2739-2742,4.基金项目
国家自然科学基金(批准号:100874040)、教育部科技创新工程重大项目培育资金项目(批准号:708062)和河南省科技创新杰出人才基金(批准号:114200510015)资助. （批准号:100874040）
