影像科学与光化学2011，Vol.29Issue(6)：417-429,13.
先进光刻胶材料的研究进展
Molecular Structure of Advanced Photoresists
摘要
Abstract
This article reviews the development of lithography technology and photoresists as well as their molecular structure for 193 ran and extreme ultravioletlithography (EUVL, the next generation lithography). Especially, we describe the recent research and development of EUV photoresists in detail for the purpose of being conducive to the domestic research on advanced photoresists.关键词
光刻胶/193 nm光刻/EUV光刻/化学放大光刻胶/分子玻璃Key words
photoresists/ EUV lithography/ 193 nm lithography/ chemically amplified photoresists/ molecular glass分类
化学化工引用本文复制引用
许箭,陈力,田凯军,胡睿,李沙瑜,王双青,杨国强..先进光刻胶材料的研究进展[J].影像科学与光化学,2011,29(6):417-429,13.基金项目
国家科技重大专项(02专项:2011ZX02701) （02专项:2011ZX02701）
