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光刻技术:发展路径及未来趋势

山口佳一 征矢野晃雅 島基之

影像科学与光化学2012,Vol.30Issue(1):1-8,8.
影像科学与光化学2012,Vol.30Issue(1):1-8,8.

光刻技术:发展路径及未来趋势

Lithography: Its Path of Evolution and Future Trends

山口佳一 1征矢野晃雅 1島基之1

作者信息

  • 1. JSR株式会社精细电子研究所半导体材料研究室,日本
  • 折叠

摘要

Abstract

Optical lithography plays an important role within high volume manufacturing (HVM) of semiconductor devices.Most "State of the art" Fabs have implemented ArF immersion technology today.Double patterning,double exposure,and side-wall image transfer technology allow for the extension of ArF immersion into 32 nm half-pitch (HP) application.In order to fabricate finer patterns,it is necessary to develop new processes.EUV lithography is a leading next generation solution for 22 nm HP and beyond.In addition,alternative solutions such as nanoimprint lithography and mask-less technology are also being considered for advanced nodes,however,they are only in the development stage at this time and in their current state represent a lot of challenges for HVM.In this paper,an overview of lithography is described from the aspect of "Materials".Additionally,future trends in lithography will be discussed.

关键词

光刻技术/纳米器件/分辨力增强/光刻胶材料

Key words

lithography/ nano devices/ resolution enhancement/ photo resist materials

分类

信息技术与安全科学

引用本文复制引用

山口佳一,征矢野晃雅,島基之..光刻技术:发展路径及未来趋势[J].影像科学与光化学,2012,30(1):1-8,8.

影像科学与光化学

OA北大核心CSCDCSTPCD

1674-0475

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