硅酸盐通报2011，Vol.30Issue(5)：1083-1088,6.
单晶硅衬底异质外延3C-SiC薄膜研究进展
Research Progress in Hetero-epitaxial Growth of 3C-SiC on Si Substrate
摘要
Abstract
The epitaxial growth of 3C-SiC epilayer has been focused on for a long time in the SiC research fields. Hetero-epitaxial growth of 3C-SiC on silicon substrate is one of the potential approaches to realize large-size and low-cost 3C-SiC epilayers. It has been attracting a great deal of attention in the past few decades. However, it is still a challenge to obtain high quality 3C-SiC epitaxial layers due to the large lattice constant mismatch (20% ) and the thermal expansion coefficient mismatch (8% ) between silicon and 3C-SiC. In this paper, we review the basic process of hetero-epitaxial growth of 3C-SiC on silicon substrate and the recent progress in defects and controllable doping. The future research hot-spots are summarized.关键词
3C-SiC/化学气相沉积/异质外延/缺陷Key words
3C-SiC/chemical vapor deposition/hetero-epitaxy/defects分类
化学化工引用本文复制引用
石彪,朱明星,陈义,刘学超,杨建华,施尔畏..单晶硅衬底异质外延3C-SiC薄膜研究进展[J].硅酸盐通报,2011,30(5):1083-1088,6.基金项目
中国科学院知识创新工程重要方向性项目(KGCX2-YW-206) （KGCX2-YW-206）
上海市科委项目(No.09DZ1141400,No.09520714900) （No.09DZ1141400,No.09520714900）
