哈尔滨工业大学学报（英文版）2011，Vol.18Issue(6)：44-47,4.
Analytical model for capacitance-voltage characteristics of ion-implanted 4H silicon carbide Schottky barrier diodes
Analytical model for capacitance-voltage characteristics of ion-implanted 4H silicon carbide Schottky barrier diodes
WANG Shou-guo 1ZHANG Yan2
作者信息
- 1. Dept. of Electronic and Information Engineering, Harbin Institute of Technology(Shenzhen Graduate School), Shenzhen 518055, China
- 2. School of Information Science and Technology, Northwest University, Xi' an 710127, China
- 折叠
摘要
关键词
silicon carbide/capacitance/Schottky barrier diodes/ion implantationKey words
silicon carbide/capacitance/Schottky barrier diodes/ion implantation分类
信息技术与安全科学引用本文复制引用
WANG Shou-guo,ZHANG Yan..Analytical model for capacitance-voltage characteristics of ion-implanted 4H silicon carbide Schottky barrier diodes[J].哈尔滨工业大学学报（英文版）,2011,18(6):44-47,4.
