红外技术2012，Vol.34Issue(2)：89-94,6.
一种与CMOS工艺兼容的热电堆红外探测器
Fabrication of a Thermopile Infrared Detector That Compatible with CMOS Process
摘要
Abstract
A kind of MEMS thermopile infrared detector that compatible with CMOS process is presented in this paper. The detector, whose fill factor is larger than 80%, has a suspension structure with one pair of thermopiles, with the black silicon as the absorption layer material and P/N polysilicon as the thermopiles material. The basic principle of the detector, optimum of detector performance and fabrication process is analyzed. With the selected material parameters, the optimal structure parameters are obtained. Through the theoretic calculation, a novel thermopile-based infrared detector is obtained, with good properties of high responsivity (larger than 1000 V/W) and detectivity (larger than 1 × 108cmHz1/2W-1), and low time constant value (smaller than 40 ms) and NETD (smaller than 30 mK). The absorption layer locates in the upper layer of the detector; while the layer of metal layout locates in the bottom, which is easier to integrate with the read-out circuit layer. The pixel size is designed as 25 μm ×25 μ.m, which is easier to be formed into an infrared focal plane array.关键词
CMOS兼容性/热电堆/红外/MEMS/黑硅Key words
CMOS compatibility/ thermopile/ infrared/ MEMS/ black silicon分类
信息技术与安全科学引用本文复制引用
赵利俊,欧文,闫建华,明安杰,袁烽,夏燕..一种与CMOS工艺兼容的热电堆红外探测器[J].红外技术,2012,34(2):89-94,6.基金项目
国家重点自然科学基金"无线、集成化无源传感器技术基础研究",项目批准号:61136006. （）
