红外与毫米波学报2011，Vol.30Issue(6)：481-485,5.
采用InGaAs或InAlAs缓冲层的高In组分InGaAs探测器结构材料特性
High indium content InGaAs photodetector:with InGaAs or InAlAs graded buffer layers
摘要
Abstract
High indium content In0.78 Ga0.22As photodetector structures have been grown on InP substrates with Inx Ga1 -xAs or InxAl1 -xAs graded buffer layers wherein x changed continuously by gas source molecular beam epitaxy.Their characteristics were investigated by atomic force microscope,x-ray diffraction,transmission electron microscopy and photoluminescence.The differences between samples with the two kinds of buffer layers were studied.Results show that moderate surface morphology can be obtained with either InxGa1 -xAs or InxAl1 -xAs buffer layers.Larger residual strain is present in the photodetector structure with InxGa1 -xAs buffer layer.On the other hand,superior optical characteristics have been observed for the photodetector structure with Inx Al1 -xAs buffer layer.关键词
光电探测器/高In组分/缓冲层/InGaAs/InAlAsKey words
photodetector/high indium content/buffer/InGaAs/InAlAs分类
信息技术与安全科学引用本文复制引用
顾溢,王凯,李成,方祥,曹远迎,张永刚..采用InGaAs或InAlAs缓冲层的高In组分InGaAs探测器结构材料特性[J].红外与毫米波学报,2011,30(6):481-485,5.基金项目
Natural Science Foundation of Shanghai (10ZR1436300) （10ZR1436300）
Innovative Foundation of Shanghai Institute of Microsystem and Information Technology （）
Foundation of Key Laboratory of Infrared Imaging Materials and Detectors CAS. （）
