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GaAs/AlGaAs异质结的微波调制反射谱

钱轩 谷晓芳 姬扬

红外与毫米波学报2011,Vol.30Issue(6):486-489,510,5.
红外与毫米波学报2011,Vol.30Issue(6):486-489,510,5.

GaAs/AlGaAs异质结的微波调制反射谱

Microwave-modulated reflectance spectroscopy in the GaAs/AlGaAs heterostructure

钱轩 1谷晓芳 1姬扬1

作者信息

  • 1. 中国科学院半导体研究所超晶格国家重点实验室,北京100083
  • 折叠

摘要

Abstract

A microwave-modulated reflectance spectroscopy (MMRS) measurement system was constructed.This MMRS technique was used to identify a transition from holes in valence band to electrons in the ground subband (GS) of the twodimensional electron system (2DES) formed in a GaAs/AlGaAs heterostructure sample.The temperature (T) dependence of the MMRS shows a blue shift of the energy gap with increasing T,while the magnetic field (B) dependence of the MMRS shows a red shift of the energy gap with increasing B.Both phenomena are attributed to the band-filling effect of holes in valence band in the GaAs/AlGaAs heterostructure.A theoretical simulation based on Kramers-Kronig relation was also presented which was similar with the experimental data.

关键词

微波调制反射谱/二维电子系统

Key words

microwave-modulated reflectance spectroscopy/two-dimensional electron system

分类

数理科学

引用本文复制引用

钱轩,谷晓芳,姬扬..GaAs/AlGaAs异质结的微波调制反射谱[J].红外与毫米波学报,2011,30(6):486-489,510,5.

基金项目

National Nature Science Foundation(10674129) (10674129)

National Basic Research Program(2009CB929301) (2009CB929301)

红外与毫米波学报

OA北大核心CSCDCSTPCDSCI

1001-9014

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