红外与毫米波学报2011，Vol.30Issue(6)：490-494,5.
Si基CdTe/HgCdTe分子束外延材料的位错抑制
Dislocation reduction in CdTe/HgCdTe film prepared by MBE on Si substrate
沈川 1顾仁杰 2傅祥良 1王伟强 2郭余英 1陈路1
作者信息
- 1. 中国科学院上海技术物理研究所红外材料与器件重点实验室,上海200083
- 2. 中国科学院研究生院,北京100039
- 折叠
摘要
Abstract
The dislocation movement model of HgCdTe/Si which is based on Masafumi s theory of GaAs/Si was modified and improved. Rapid thermal annealing is performed on HgCdTe/Si. The results of the experiments and the theoretical calculation agree closely. We have shown a reduction as much as one order of magnitude in the number of dislocations of CdTe/Si epilayers. The lowest etched pit density (EPD) values is 2.5 × 105cm-2 after 500 ℃. Rapid thermal annealing for 1 min.关键词
碲镉汞/热退火/位错/分子束外延Key words
HgCdTe/ thermal annealing/ dislocation/ MBE分类
信息技术与安全科学引用本文复制引用
沈川,顾仁杰,傅祥良,王伟强,郭余英,陈路..Si基CdTe/HgCdTe分子束外延材料的位错抑制[J].红外与毫米波学报,2011,30(6):490-494,5.
