红外与毫米波学报2011，Vol.30Issue(6)：507-510,4.
原位退火对磁控溅射制备的ZnS薄膜微结构和发光性能的影响
Effects of in-situ annealing on the structure and photoluminescence of ZnS thin films prepared by RF sputtering
摘要
Abstract
ZnS thin films have been deposited on glass substrates by RF magnetron sputtering. The effect of in-situ annealing in argon atmosphere at temperatures ranging from 300℃ to 500℃ on the structural and photoluminescence properties has been investigated by x-ray diffraction ( XRD) , scanning electron microscopy ( SEM ) and photoluminescence ( PL) spectroscopy. It has been found that the annealing has little effect on the crystallinity and grain size of ZnS films, but affects the photoluminescence significantly. The PL spectra of the films annealed at lower temperatures show a multiple-peak structure, while only single luminescence peak is observed for the sample annealed at 500X1. The difference in the PL spectra may result from the variation of the defect type and density in the ZnS films aroused by different annealing temperatures.关键词
ZnS薄膜/原位退火/光致发光/磁控溅射Key words
ZnS films/ in-situ annealing/ photoluminescence/ magnetron sputtering分类
数理科学引用本文复制引用
石刚,李亚军,左少华,江锦春,胡古今,褚君浩..原位退火对磁控溅射制备的ZnS薄膜微结构和发光性能的影响[J].红外与毫米波学报,2011,30(6):507-510,4.基金项目
国家自然科学基金项目(60821092) （60821092）
中国科学院知识创新重要方向性项目(07JC14058) （07JC14058）
上海市科委基础研究重点项目(08JC1420900) （08JC1420900）
