红外与毫米波学报2012，Vol.31Issue(1)：15-20,6.
As掺杂碲镉汞富碲液相外延材料特性的研究
As-doped HgCdTe films grown by Te-rich LPE
摘要
Abstract
The properties of As-doped HgCdTe epilayers grown by Te-rich LPE were investigated. The Hall measurements showed that the electrical parameters varied greatly with the samples even though they were grown under the same conditions. If the epilayers are assumed homogeneous, Hall parameters cannot be interpreted well theoretically. By using the secondary ion mass spectrometry (SIMS) and temperature dependent Hall measurements, the accumulation of arsenic atoms was observed on the surface of the HgCdTe epilayers after the Hg-rich activation annealing at high temperature. The arsenic atom concentration of the accumulation layer is 1 - 2 orders of magnitude higher than that inside, which introduced a nonu-niform distribution of acceptor AsT, in HgCdTe epilayer. Based on the characteristic of arsenic atom distribution, a simplified double layer model was applied to describe the distribution of the acceptor in HgCdTe epilayer. Hall parameters of the epilayers can be explained well by using the above method. The concentration and activation energy of acceptor are obtained.关键词
碲镉汞/霍尔效应/As掺杂/激活退火/双层模型Key words
HgCdTe/ Hall Effect/ As-doped/ activation annealing/ layer model分类
数理科学引用本文复制引用
仇光寅,张传杰,魏彦锋,陈晓静,徐庆庆,杨建荣..As掺杂碲镉汞富碲液相外延材料特性的研究[J].红外与毫米波学报,2012,31(1):15-20,6.基金项目
国家自然科学基金(60876012),上海市自然科学基金(10ZR1434400) （60876012）
