红外与毫米波学报2012，Vol.31Issue(1)：21-25,5.
Nd掺杂对BiFeO3薄膜微结构和电学性能的影响
The effect of Nd doping on microstructure and electrical properties of BiFeO3 thin films
摘要
Abstract
The Nd doped BiFeO3thin films are prepared on LaNiO3/Si ( 100) substrate by chemical solution deposition method. The results of x-ray diffraction show that the lattice constant of thin films decreases with the increase of Nd content. The impurity phases are found in the thin film with 20% Nd content. The results of dielectric measurement indicate that the dielectric constant and loss of thin films decrease with the increase of Nd content. A very strong dielectric frequency dispersion and relaxation of dielectric loss peak occurs in the thin film with 2% Nd content and it follows Debye-like law. The leakage current of thin films decreases with the increase of Nd content. The current transport follows SCLC model in low electric field region and follows Poole-Frenkel model in high electric field region. These results suggest that Nd doping has a strong influence on microstructure and electric properties of BiFeO3thin films.关键词
铁电薄膜/介电性能/Nd掺杂/漏电流Key words
ferroelectric thin films/ dielectric property/ Nd doping/ leakage current分类
数理科学引用本文复制引用
高成,杨静,孟祥建,白伟,林铁,孙璟兰,褚君浩..Nd掺杂对BiFeO3薄膜微结构和电学性能的影响[J].红外与毫米波学报,2012,31(1):21-25,5.基金项目
国家自然科学基金(60221502,60777044,50702036) （60221502,60777044,50702036）
上海市自然科学基金(10DJ1400202) （10DJ1400202）
