金刚石与磨料磨具工程2011，Vol.31Issue(6)：67-70,4.
金刚石膜/硅复合基片的制备工艺研究
Preparation of diamond film/Si composite substrate
王志娜 1李国华 2王朝阳 1姜龙 2张瑞芹2
作者信息
- 1. 河北省激光研究所,石家庄050081
- 2. 河北普莱斯曼金刚石科技有限公司,石家庄050081
- 折叠
摘要
Abstract
Diamond films were deposited on Si substrate by plasma jet. The influence of size and pretreatment method of silicon wafer, as well as diamond film deposition and heat treatment on the characteristics and crack of composite substrate were investigated. The fabrication processes for the diamond film/Si composite substrates was optimized. The results showed that; the thickness of diamond film deposited on Si substrate was more than 20 μm. After polishing, the surface roughness(Ra) of diamond film reached 5. 2 nm. The thickness of residual diamond film was more than 10 μm, and the flatness was less than 30 μm. The indexes of composite substrates met technical requirements of electronic components.关键词
等离子体喷射法/金刚石膜/硅复合基片/裂纹Key words
plasma jet/ diamond film/Si composite substrates/ crack分类
化学化工引用本文复制引用
王志娜,李国华,王朝阳,姜龙,张瑞芹..金刚石膜/硅复合基片的制备工艺研究[J].金刚石与磨料磨具工程,2011,31(6):67-70,4.
