计算机与数字工程2012，Vol.40Issue(2)：130-132,3.
相变存储器存储单元瞬态电流测量
Transient Programming Current Measurement of Phase Change Memory
摘要
Abstract
The measurement method of transient programmig current for phase change memory is introduced According to the operating characteristics of phase change memory, the transient current, the resistance and current relationship characteristics and the dynamic resistance of phase change memory are measured using small current sense resistor measurement through choosing the reasonable measurement parameters. By utilizing the equivalent circuit model of the measurement circuit, we analyze the factors which affect the measurement and calculate the distributed capacitance.关键词
相变存储器/瞬态电流测量/等效电路模型/分布电容Key words
phase change memory, transient current measurement, the equivalent circuit model, the distributed capacitance分类
信息技术与安全科学引用本文复制引用
马翠,李震,彭菊红,缪向水..相变存储器存储单元瞬态电流测量[J].计算机与数字工程,2012,40(2):130-132,3.基金项目
国家八六三重大项目(编号:2009AA01Z113,2009AA01 A402)资助. （编号:2009AA01Z113,2009AA01 A402）
