广东石油化工学院学报2011，Vol.21Issue(6)：25-27,3.
双极晶体管CB反偏结ESD失效的检查及分析
ESD Failure Inspection and Analysis on CB Reverse Junction of Bipolar Transistors
摘要
Abstract
Former research revealed that the most ESD sensitive port of partial highfrequency Silicon bipolar transistors is not the EB reverse junction as people know, but is the CB reverse junction. We use many technologies to analyze the inside damage point of the transistors which is failure because of the ESD injection to CB reverse junction. Different failure models were discussed. All the conclusions established the new foundations of improving devices＇ anti - statistic ability for the future.关键词
静电放电/失效分析/双极晶体管/CBKey words
ESD/failure analysis/bipolar transistor/CB分类
数理科学引用本文复制引用
杨洁,胡有志,武占成..双极晶体管CB反偏结ESD失效的检查及分析[J].广东石油化工学院学报,2011,21(6):25-27,3.基金项目
国家自然基金资助项目 （）
