人工晶体学报2011，Vol.40Issue(5)：1130-1135,6.
Cu掺杂ZnO薄膜的制备及其光谱特性
Preparation and Spectral Characteristics of Cu Doped ZnO Thin Films
摘要
Abstract
Cu doped ZnO thin films with different doping concentrations were prepared on indium-doped tin oxide (ITO) conducting glass substrates by sol-gel technique. The crystalline phase structure and surface morphology of the films were analyzed by X-ray diffraction and scanning electron microscope. The photoluminescence spectra of samples were measured by fluorescence spectrophotometer. The results show that these films have a compact hexagonal wurtzite type structure and high c-axis preferred orientation. Lattice constants of doped films are slightly less than ones of pure films because of stress exist in doped films. Blue luminescence peak and green luminescence peak have been observed from the films by different annealing temperatures at room temperature, centered at 414 nm, 438 nm and 510 nm respectively. The mechanism of the blue and green emissions was suggested and it is considered that the blue luminescence peaks originate from Zn vacancies and Zn interstitials defects, but the green luminescence peak originates from the associated defects of 0 vacancies and Zn interstitials.关键词
溶胶-凝胶法/Zn1-x Cux O薄膜/光致发光谱/缺陷能级Key words
sol-gel method/ Zn1-xCuxO thin films/ photoluminescence spectrum/ defect levels分类
数理科学引用本文复制引用
邱春霞,阮永丰,张灵翠,刘雅丽,王帅..Cu掺杂ZnO薄膜的制备及其光谱特性[J].人工晶体学报,2011,40(5):1130-1135,6.基金项目
天津市自然科学基金(07JCZDJC00600、07JCYBJC06000) （07JCZDJC00600、07JCYBJC06000）
