人工晶体学报2011，Vol.40Issue(5)：1261-1265,5.
射频磁控溅射法制备Zn1-xMgxO薄膜及其性能的研究
Preparation and Properties of Zn1 -xMgxO Thin Films by Radio Frequency Magnetron Sputtering Method
摘要
Abstract
Zn1-z MgxO (x=0. 1, 0. 16, 0. 18, 0. 24) thin films were deposited on common glass substrates by RF magnetron sputtering technology with ZnO target which was placed on high-purity Mg thin pieces. The structure, surface morphology and optical properties of the films were characterized by XRD,SEM and transmittance measurements. It was found that all the Zn1-zMgxO films showed ZnO wurtzite structure, which indicated that the Zn2+ were successfully substituted by Mg2+ in the ZnO lattice. The surface of samples was smooth, and the grains were homogeneous and compact. The average transmittance of all the films for the visible wavelength region was about 90%. As Mg content increasing, the blue shift of absorption edge of Zn1-xMgxO thin films was observed, which meant that Zn1-xMgxO thin film could adjust the band gaps.关键词
射频磁控溅射/Zn1 -xMgxO薄膜/禁带宽度Key words
RF magnetron sputtering/ Zn1-xMgxO thin films/ band gap分类
数理科学引用本文复制引用
王彦利,杨元政,高振杰,谢致薇,陈先朝,何玉定..射频磁控溅射法制备Zn1-xMgxO薄膜及其性能的研究[J].人工晶体学报,2011,40(5):1261-1265,5.基金项目
国家自然科学基金(50771037) （50771037）
高等学校博士学科点专项研究基金(200805620004)资助项目 （200805620004）
