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铝诱导纳米硅制备大晶粒多晶硅薄膜的研究

方茹 沈鸿烈 吴天如 刘斌 沈剑沧

人工晶体学报2011,Vol.40Issue(6):1387-1393,7.
人工晶体学报2011,Vol.40Issue(6):1387-1393,7.

铝诱导纳米硅制备大晶粒多晶硅薄膜的研究

Research on Preparation of Large Grain Size Polycrystalline Silicon Thin Films by Aluminum-induced Crystallization from Nanocrystalline Silicon

方茹 1沈鸿烈 1吴天如 1刘斌 1沈剑沧2

作者信息

  • 1. 南京航空航天大学材料科学与技术学院,南京211106
  • 2. 南京大学物理学系固体微结构物理国家重点实验室,南京210093
  • 折叠

摘要

Abstract

The glass/nc-Si/Al layered structures were prepared by HWCVD and magnetron sputtering on high transparence glass substrate. The layered structures were kept in a tube furnace at H2 atmosphere for 5 h to undertake an aluminum-induced crystallization process. The prepared samples were characterized by XRD, optical microscope, SEM and Raman spectrum. Polycrystalline film with a strong (111) orientation was found in all samples. The grain size up to 400 μm was formed in the sample treated at 425 ℃ in a discontinuous film. As the temperature increased to 450 ℃, continuous polycrystalline film with smaller grain size was produced. For samples prepared at 475 ℃, the polycrystalline film presents even better crystal quality with a maximum grain size about 200 μm. In addition, the crystallization mechanism of AIC from nanocrystalline silicon from the point of view of dynamics was carried out. The glass/nc-Si/Al layered structures were prepared by HWCVD and magnetron sputtering on high transparence glass substrate. The layered structures were kept in a tube furnace at H2 atmosphere for 5 h to undertake an aluminum-induced crystallization process. The prepared samples were characterized by XRD, optical microscope, SEM and Raman spectrum. Polycrystalline film with a strong (111) orientation was found in all samples. The grain size up to 400 μm was formed in the sample treated at 425 ℃ in a discontinuous film. As the temperature increased to 450 ℃, continuous polycrystalline film with smaller grain size was produced. For samples prepared at 475 ℃, the polycrystalline film presents even better crystal quality with a maximum grain size about 200 μm. In addition, the crystallization mechanism of AIC from nanocrystalline silicon from the point of view of dynamics was carried out.

关键词

大晶粒/多晶硅薄膜/铝诱导/纳米硅

Key words

large grain size/ polycrystalline silicon film/ aluminum-induced/ nanocrystalline silicon

分类

数理科学

引用本文复制引用

方茹,沈鸿烈,吴天如,刘斌,沈剑沧..铝诱导纳米硅制备大晶粒多晶硅薄膜的研究[J].人工晶体学报,2011,40(6):1387-1393,7.

基金项目

国家高技术研究发展计划(863计划)资助项目(2006AA03Z219) (863计划)

江苏高校优势学科建设工程资助项目 ()

人工晶体学报

OA北大核心CSCDCSTPCD

1000-985X

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