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首页|期刊导航|人工晶体学报|Pb过量对以Ti-Al为阻挡层的硅基铁电电容器极化翻转性能的影响

Pb过量对以Ti-Al为阻挡层的硅基铁电电容器极化翻转性能的影响

刘卓佳 刘保亭 彭增伟 代秀红 闫会芳 付跃举 赵庆勋

人工晶体学报2011,Vol.40Issue(6):1552-1556,5.
人工晶体学报2011,Vol.40Issue(6):1552-1556,5.

Pb过量对以Ti-Al为阻挡层的硅基铁电电容器极化翻转性能的影响

Effect of Lead Excess on Polarization Switching Properties of Si-based Ferroelectric Capacitor with Ti-Al Barrier Layer

刘卓佳 1刘保亭 1彭增伟 1代秀红 1闫会芳 1付跃举 1赵庆勋1

作者信息

  • 1. 河北大学物理科学与技术学院,保定071002
  • 折叠

摘要

Abstract

Pt/La0.5 Sr0 5 Co03 (LSCO ) /Pb (Zr0 4 Ti0 6) O3 (PZT) /LSCO/Ti-Al/Si heterostructure has been fabricated, in which the sputtered LSCO films were used as the electrodes of the LSCO/PZT/LSCO capacitor, PZT films were prepared by sol-gel technique using different excess lead, and using Ti-Al as a conducting barrier layer. The effect of lead excess on the swithching properties of the LSCO/PZT/LSCO capacitor has been investigated. The results indicated that lead excess has great impact on the switching properties of the capacitors, and the stoichiometric Pb( Zr0.4Ti0.6) O3 film, annealed in a conventional annealing furnace at 550℃ for 1 h, could yield the best switching properties, which corresponds to 15% lead excess in the precursor. The coercive voltage and remnant polarization of the LSCO/PZT/LSCO capacitor were 1.25 V and 24.6 μC/cm2, respectively, measured at the voltage of 5 V. Moreover, it is found that the LSCO/PZT/LSCO capacitor is fatigue free up to 109 switching cycles, and the resistivity ofthe capacitor decreases with the increase of lead excess of the precursor.

关键词

Pb过量/铁电电容器/PZT/极化翻转/溶胶-凝胶

Key words

lead excess/ ferroelectric capacitor/ PZT/ polarization flip/ sol-gel

分类

化学化工

引用本文复制引用

刘卓佳,刘保亭,彭增伟,代秀红,闫会芳,付跃举,赵庆勋..Pb过量对以Ti-Al为阻挡层的硅基铁电电容器极化翻转性能的影响[J].人工晶体学报,2011,40(6):1552-1556,5.

基金项目

国家自然科学基金(60876055,11074063)资助项目 (60876055,11074063)

河北省应用基础研究计划重点项目(10963525D) (10963525D)

高等学校博士点基金(20091301110002) (20091301110002)

人工晶体学报

OA北大核心CSCDCSTPCD

1000-985X

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