四川大学学报（自然科学版）2011，Vol.48Issue(6)：1381-1385,5.DOI:10.3969/j.issn.0490-6756.2011.06.028
BiⅣ离子5dRydberg态能级的最弱受约束电子势模型理论计算
Calculations of the 5d Rydberg energy levels for Bi Ⅳ using the weakest bound electron potential model theory
摘要
Abstract
Based on the weakest bound electron potential model(WBEPM) theory, six series energy lev els of the Rydberg series 5d106s2→5<5d96s2np (n=6~20) and 5d10 6s2→5d96s2nf (n=5~20) of Bi Ⅳ ions are calculated by means of the method, and the foreign level perturbation corrections are taken into ac count in calculations. The calculated values are in good agreement with the experimental results, and some energies without experimental values are predicted.关键词
最弱受约束电子势模型/BiⅣ离子/量子数亏损/Rydberg态/能级Key words
WBEPM/Bi IV ions/quantum defect/Rydberg states/energy levels分类
数理科学引用本文复制引用
曹建建,周超,梁良,何世昆..BiⅣ离子5dRydberg态能级的最弱受约束电子势模型理论计算[J].四川大学学报（自然科学版）,2011,48(6):1381-1385,5.基金项目
陕西省教育厅专项科研基金(08JK343) （08JK343）
西安建筑科技大学基础研究基金(JC0724) （JC0724）
