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应用于半导体器件的掺杂纳米金刚石膜

苏含 汪建华 熊礼威 刘鹏飞 江川

武汉工程大学学报2011,Vol.33Issue(10):68-72,5.
武汉工程大学学报2011,Vol.33Issue(10):68-72,5.DOI:10.3969/j.issn.1674-2869.2011.10.016

应用于半导体器件的掺杂纳米金刚石膜

Semiconductor application of doped nano-crystalline diamond film

苏含 1汪建华 1熊礼威 2刘鹏飞 1江川1

作者信息

  • 1. 武汉工程大学湖北省等离子体化学与新材料重点实验室,武汉430074
  • 2. 中国科学院等离子体物理研究所,合肥230031
  • 折叠

摘要

Abstract

Diamond film is an ideal semiconductor material due to its excellent properties, such as high thermal conductivity, wide band gap, high dielectric breakdown field and good carrier mobility. This paper describes the advantages of the doped diamond films as the working layer in semiconductor devices,and presents a comprehensive review of research status in diamond about p and n doping. The factors that influence the growth of Nano-crystalline diamond films are also discussed. The trends of the diamond film applications in semiconductor devices are investigated and the application potential is . Prospected.

关键词

纳米金刚石膜/半导体器件/掺杂

Key words

nano-crystalline diamond film/semiconductors/doping

分类

化学化工

引用本文复制引用

苏含,汪建华,熊礼威,刘鹏飞,江川..应用于半导体器件的掺杂纳米金刚石膜[J].武汉工程大学学报,2011,33(10):68-72,5.

基金项目

国家自然科学基金资助项目(11175137). (11175137)

武汉工程大学学报

1674-2869

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