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A:Al2O3(A=Cr,Fe,Ni)晶体生长及其缺陷研究

范修军 王越 徐宏

无机材料学报2011,Vol.25Issue(12):1266-1272,7.
无机材料学报2011,Vol.25Issue(12):1266-1272,7.DOI:10.3724/SP.J.1077.2011.01266

A:Al2O3(A=Cr,Fe,Ni)晶体生长及其缺陷研究

Growth and Defects Study of A:Al2O3(A=Cr, Fe, Ni) Single Crystals

范修军 1王越 1徐宏2

作者信息

  • 1. 北京工业大学应用数理学院,北京100124
  • 2. 北京工业大学激光工程研究院,北京100124
  • 折叠

摘要

Abstract

High quality Cr-, Fe- and Ni- doped A12O3 (A:A12O3) single crystals with a diameter of 6-8 mm and a length of 60-80 mm were successfully produced by the floating zone technique. The relationship between crystal quality and growth conditions was discussed, and the optimum preparation parameter was obtained. The crystals growth direction was determined as <001> by X-ray diffraction. The X-ray rocking curve of the crystal had a FWMH of 0.089°, proving excellent quality of the crystal. The as-grown crystals were characterized by polarized optical microscope and scanning electron microscope, as well as X-ray diffraction. The observed primary crystal defects were sub-angle grain, boundaries, inclusions and solute trails. The absorption spectra properties and dielectric constant measurements of A:A12O3 crystals and fluorescence spectra for Cr:Al2O3 crystals were investigated. In view of the fact that grown A:A12O3 crystals show good quality, a respectively high dielectric constant e, (12.1-15.7), low dielectric loss tanS (0.0020-0.0002), and favorable thermal stability suggests their utilization as laser matrix, dielectric material for microelectronics and substrate material.

关键词

A:Al2O3/晶体生长/光学浮区法/晶体缺陷

Key words

A:A12O3/ single crystal growth/ floating zone technique/ crystal defects

分类

数理科学

引用本文复制引用

范修军,王越,徐宏..A:Al2O3(A=Cr,Fe,Ni)晶体生长及其缺陷研究[J].无机材料学报,2011,25(12):1266-1272,7.

基金项目

北京市教委基金(JC00615200901) (JC00615200901)

无机材料学报

OA北大核心CSCDCSTPCDSCI

1000-324X

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