物理学报2011，Vol.60Issue(9)：474-479,6.
F原子与SiC（100）表面相互作用的分子动力学模拟
Molecular dynamics simulations of energy effects on atorn F interaction with SiC（100）
摘要
Abstract
In this study, molecular dynamics simulations are used to investigate atom F interacting with SiC at 300 K. Simulation results show that with the saturation of the deposition of F atoms on the surface, the compositions （SiFx and CFx groups （x4）） in the reaction layer reach a steady state. When incident energy is less than 6 eV, no etching is observed. With incident energy increasing, the etching yields of Si and C atoms increase. It is found that Si atoms are preferentially removed. For etching products, SiF4 is dominant. And the main etching mechanism of Si atoms is chemical etching.关键词
分子动力学/刻蚀/能量/SiCKey words
molecular dynamics/etching/energy/SiC分类
数理科学引用本文复制引用
贺平逆,吕晓丹,赵成利,宁建平,秦尤敏,苟富均..F原子与SiC（100）表面相互作用的分子动力学模拟[J].物理学报,2011,60(9):474-479,6.基金项目
贵州省优秀青年科技人才培养计划 （）
国际热核聚变实验堆（ITER）计划专项（批准号：2009GB104006）资助的课题 （）
