物理学报2011，Vol.60Issue(9)：480-486,7.
离子束溅射自组装Ge/Si量子点生长的演变
Evolution of Ge/Si quantum dots self-assembled grown by ion beam sputtering
摘要
Abstract
A series of Ge quantum dot samples with different Ge thickness is grown on n-Si（100） substrates by ion beam sputtering. Their morphology and structure are characterizated using AFM and Raman spectra, in which the evolution of the morphology, density, dimension, crystalline, and composition of the Ge quantum dots are discussed in detail. The results show that after the growth mode transiting from 2-D to 3-D, the shape of the Ge quantum dot changes directly into a dome shape and no pyramid dots are observed. Besides, with the increase of the Ge deposition, the density of the quantum dots increases to a maximum and then decreases, the crystalline becomes better, but the Ge/Si alloying processing is enhanced and the Ge composition decreases in quantum dots at the same time.关键词
离子束溅射/量子点/表面形貌/Raman光谱Key words
ion beam sputtering/quantum dots/surface morphology/Raman spectra分类
数理科学引用本文复制引用
张学贵,王茺,鲁植全,杨杰,李亮,杨宇..离子束溅射自组装Ge/Si量子点生长的演变[J].物理学报,2011,60(9):480-486,7.基金项目
国家自然科学基金 （）
云南省自然基金重点项目 （）
教育部学术研究重点项目（批准号：210207）资助的项目 （）
