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张应力对准同形相界Pb(Zr,Ti)O_3薄膜相变和铁电性能影响

闻心怡 王耘波 周文利 高俊雄 于军

物理学报2011,Vol.60Issue(9):641-649,9.
物理学报2011,Vol.60Issue(9):641-649,9.

张应力对准同形相界Pb(Zr,Ti)O_3薄膜相变和铁电性能影响

Influence of tensile stress on the phase formation and electronic properties of Pb(Zr,Ti) O_3 film at morphotropic phase boundary

闻心怡 1王耘波 1周文利 1高俊雄 1于军1

作者信息

  • 1. 华中科技大学电子科学与技术系,武汉430074
  • 折叠

摘要

Abstract

Pb(Zr0.52,Ti0.48)Nb0.04O3 (Nb-doped PZT, PZTN) films are deposited on Pt/TiOx/SiO2/Si substrates with BaPbO3(BPO) buffer layers by RF-magnetron sputtering method. The magnitudes of tensile stress in PZTN films can be changed by adjusting the thickness of BPO layer. For PZTN films with 68 nm and 135 nm-BPOs, the tensile stresses measured by 2θ-sin2ψ method are 0.786 and 0.92 GPa respectively. Enhanced ferroelectric is observed in PZTN film with raised tensile stress. The remanent polarization and the coercive field for PZTN films with tensile stresses of 0.786 GPa and 0.92 GPa are 41.2μC/cm2(70.7 kV/cm) and 44.1μC/cm2(58.1 kV/cm) respectively. The leakage current decreases from 6.57×10-7A/cm-2 to 5.54×10-8A/cm-2 while tensile stress of PZTN film is raised from 0.786 to 0.92GPa. Fine XRD scan is performed with grazing incidence geometry to investigate the phase composition of PZTN films. Rietveld analysis shows that an increased tensile stress in PZTN film can promote the amount of monoclinic phase,which may be the reason for the ferroelectric property improvement.

关键词

PZT/准同形相界/掠射扫描方式/结构精修

Key words

PZT/morphotropic phase boundary/grazing-incidence scan/rietveld

分类

信息技术与安全科学

引用本文复制引用

闻心怡,王耘波,周文利,高俊雄,于军..张应力对准同形相界Pb(Zr,Ti)O_3薄膜相变和铁电性能影响[J].物理学报,2011,60(9):641-649,9.

基金项目

国家自然科学基金重大研究计划(批准号:90407023) 国家自然科学基金面上项目(批准号:60971008)资助的课题 ()

物理学报

OA北大核心CSCDCSTPCDSCI

1000-3290

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