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AlN纳米线宏观阵列的制备

李志杰 田鸣 贺连龙

物理学报2011,Vol.60Issue(9):669-674,6.
物理学报2011,Vol.60Issue(9):669-674,6.

AlN纳米线宏观阵列的制备

Preparation of AlN nanowire macroscopic arrays

李志杰 1田鸣 1贺连龙2

作者信息

  • 1. 沈阳工业大学理学院,沈阳110870
  • 2. 中国科学院金属研究所,沈阳110016
  • 折叠

摘要

Abstract

AlN nanowire macro-arrays are successfully synthesized and characterized by the second template method. In the article we mainly research the process of preparing the AlN nanowire macro-arrays each with a certain orientation and uniform diameter by the chemical vapor deposition (CVD) method. Metal nanoparticles are prepared by CVD and self-assembled PS sphere templates, and then AlN nanowires macro arrays are compounded by the CVD on template and the metal nanoparticles on the template as a catalyst. The samples are observed by SEM and TEM, AlN nanowire macro-arrays have an area of about 0.3 mm×0.2 mm, they are well distributed, and have an average diameter of about 41 nm, an average length of about 1.8μm, distributed density and coverage of large macro-hexagonal AlN nanowire arrays. So a method to controllably prepare AIN macroscopic nanowire arrays is obtained.

关键词

AlN纳米线阵列/模板法/CVD法/SEM

Key words

AlN nanowires arrays/template/CVD/SEM

分类

化学工程

引用本文复制引用

李志杰,田鸣,贺连龙..AlN纳米线宏观阵列的制备[J].物理学报,2011,60(9):669-674,6.

基金项目

国家重点基础研究发展规划 ()

辽宁省自然基金(批准号:20062038)资助的课题 ()

物理学报

OA北大核心CSCDCSTPCDSCI

1000-3290

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