物理学报2011，Vol.60Issue(9)：707-711,5.
氮化镓基发光二极管结构中粗化p型氮化镓层的新型生长方法
A new growth method of roughed p-GaN in GaN-based light emitting diodes
摘要
Abstract
A new growth method of roughed p-GaN has been demonstrated in this paper. First, some crystal seeds of p-GaN are obtained by utilizing low-temperature growth. Then, a p-GaN high-temperature expitaxy layer is grown on it subsequently with a fast growth rate, which will enlarge the roughness degree. Compared with the luminous flux of the conventional light emitting diode with flat p-GaN, the luminous flux is improved by 45%. Meanwhile, it is found that the problems of large reverse current and high forward bias aroused by the low-temperature epitaxy are also solved.关键词
粗化/氮化镓/p型氮化镓/发光二极管Key words
surface roughness/GaN/p-GaN/LED引用本文复制引用
李水清,汪菜,韩彦军,罗毅,邓和清,丘建生,张洁..氮化镓基发光二极管结构中粗化p型氮化镓层的新型生长方法[J].物理学报,2011,60(9):707-711,5.基金项目
国家重点基础研究发展计划（973） （）
国家自然科学基金 （）
国家高技术研究发展计划（863） （）
北京市自然科学基金（批准号：4091001）资助的课题 （）
