物理学报2011，Vol.60Issue(9)：723-732,10.
位移损伤剂量法评估空间GaAs/Ge太阳电池辐照损伤过程
Radiation damage of space GaAs/Ge solar cells evaluated by displacement damage dose
摘要
Abstract
In this paper,the degradation of irradiated GaAs/Ge single junction （SJ） solar cells is evaluated under the orbital environments using the displacement damage dose method. Firstly the electric-property changes of the SJ solar cells are experimentally obtained with the fluencies of electrons and protons of various energies under ground-based irradiation simulators. Based on the experimenal results and the calculated non-ionization energy losses （NIELs） of the electrons and protons in GaAs, the equivalent exponent n is obtained to be 1.7 for various electron energies,while the equivalent coefficient Rep for electron displacement damage converted into that of protons is 5.2. Furthermore, a degradation formula of the electrical property of the domestic SJ solar cell is established as a function of displacement damage dose during the particle irradiation. Using the displacement damage technique, the orbital evolution of the electric property degradation of the domestic SJ cell is predicted in this paper. In the meantime, the shielding effects of the cover glass with different thicknesses are also evaluated.关键词
GaAs/Ge太阳电池/辐照损伤/带电粒子/位移损伤剂量Key words
GaAs/Ge solar cells/radiation damage/charged particles/displacement damage dose分类
力学引用本文复制引用
吴宜勇,钱勇,陈鸣波,岳龙,胡建民,蓝慕杰,肖景东,杨德庄,何世禹,张忠卫,王训春..位移损伤剂量法评估空间GaAs/Ge太阳电池辐照损伤过程[J].物理学报,2011,60(9):723-732,10.基金项目
国家自然科学基金（批准号：11075043）资助的课题 （）
